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SPICE MODEL: MMDT4126
MMDT4126
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * * *
Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT4124) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)
E2 B2 C1 C2
A
SOT-363 Dim Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
E1
B1
A
BC
B C D F H
M
Mechanical Data
* * * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K2B Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate)
E2 C2
G H K
0.65 Nominal
J K L M a
J
D
F
L
B1
E1
All Dimensions in mm
B2
C1
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMDT4126 -25 -25 -4.0 -200 200 625 -55 to +150 Unit V V V mA mW K/W C
Characteristic
Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead.
DS30160 Rev. 8 - 2
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MMDT4126
a Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -25 -25 -4.0 3/4 3/4 120 60 3/4 3/4 3/4 3/4 120 250 3/4 Max 3/4 3/4 3/4 -50 -50 360 3/4 -0.40 -0.95 4.5 10 480 3/4 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCB = -20V, IE = 0V VEB = -3.0V, IC = 0V IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -50mA, IB = -5.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz
hFE VCE(SAT) VBE(SAT) Cobo Cibo hfe fT NF
3/4 V V pF pF 3/4 MHz dB
Ordering Information
Device MMDT4126-7-F
Notes:
(Note 5) Packaging SOT-363 Shipping 3000/Tape & Reel
4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B YM
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4
YM K2B
2002 N May 5
K2B = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
2003 P Jun 6
2004 R Jul 7
2005 S Aug 8
2006 T Sep 9
2007 U Oct O
2008 V Nov N
2009 W Dec D
DS30160 Rev. 8 - 2
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MMDT4126
100
f = 1MHz
300 250 200 150 100 50
CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
350
PD, POWER DISSIPATION (mW)
10
Cibo
Cobo
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature
1 0.1
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage
1000
VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE
10
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125C
1
100
TA = -25C TA = +25C
0.1
10
VCE = 1.0V
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current
0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current
1.0
VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE
0.9
0.8
0.7
0.6
IC IB = 10
0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current 100
DS30160 Rev. 8 - 2
3 of 4 www.diodes.com
MMDT4126
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated.
DS30160 Rev. 8 - 2
4 of 4 www.diodes.com
MMDT4126

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